Radiofrequency device and manufacturing method thereof

ABSTRACT

A radiofrequency device includes a buried insulation layer, a transistor, a contact structure, a connection bump, an interlayer dielectric layer, and a mold compound layer. The buried insulation layer has a first side and a second side opposite to the first side in a thickness direction of the buried insulation layer. The transistor is disposed on the first side of the buried insulation layer. The contact structure penetrates the buried insulation layer and is electrically connected with the transistor. The connection bump is disposed on the second side of the buried insulation layer and electrically connected with the contact structure. The interlayer dielectric layer is disposed on the first side of the buried insulation layer and covers the transistor. The mold compound layer is disposed on the interlayer dielectric layer. The mold compound layer may be used to improve operation performance and reduce manufacturing cost of the radiofrequency device.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a radiofrequency device and amanufacturing method thereof, and more particularly, to a radiofrequencydevice including a mold compound layer and a manufacturing methodthereof.

2. Description of the Prior Art

In the semiconductor manufacturing related field, the size of functionaldevices in the integrated circuits becomes smaller continuously forenhancing the performance of the chip. However, as the density of thefunctional devices increased, the influence of many electricalproperties on the device operation performance becomes more obvious, andthat will hinder the development of scaling down and generate problemsin manufacturing processes. For example, in some processes for forming aradiofrequency switch device, a semi-finished product formed by a partof the processes sometimes has to be moved to a handling substrate forperforming subsequent processes. For reducing the influence of thehandling substrate on the radiofrequency switch device, the electricalresistance of the handling substrate has to be high enough generally,and the manufacturing cost cannot be reduced accordingly because thehanding substrate with high resistivity is more expensive. Additionally,in another process for forming a radiofrequency switch device, asilicon-on-insulator (SOI) substrate including a trap rich layer may beapplied in the process, and this substrate is expensive too. In thiskind of process, deterioration in a high-temperature process tends tohappen, and it will be difficult to control problems such as signal lossand signal distortion of the radiofrequency switch device.

SUMMARY OF THE INVENTION

A radiofrequency device and a manufacturing method thereof are providedin the present invention. A mold compound layer is disposed on aninterlayer dielectric layer, and the mold compound layer is used toreplace a handling substrate required in the processes for improving theoperation performance of the radiofrequency device and reducing themanufacturing cost of the radiofrequency device.

According to an embodiment of the present invention, a radiofrequencydevice is provided. The radiofrequency device includes a buriedinsulation layer, a transistor, a contact structure, a connection bump,an interlayer dielectric layer, and a mold compound layer. The buriedinsulation layer has a first side and a second side opposite to thefirst side in a thickness direction of the buried insulation layer. Thetransistor is disposed on the first side of the buried insulation layer.The contact structure penetrates the buried insulation layer and iselectrically connected with the transistor. The connection bump isdisposed on the second side of the buried insulation layer and iselectrically connected with the contact structure. The interlayerdielectric layer is disposed on the first side of the buried insulationlayer and covers the transistor. The mold compound layer is disposed onthe interlayer dielectric layer.

According to an embodiment of the present invention, a manufacturingmethod of a radiofrequency device is provided. The manufacturing methodincludes the following steps. Firstly, a transistor is formed on a firstside of a buried insulation layer. An interlayer dielectric layer isformed on the first side of the buried insulation layer, and theinterlayer dielectric layer covers the transistor. A mold compound layeris formed on the interlayer dielectric layer. After forming the moldcompound layer, a contact structure is formed penetrating the buriedinsulation layer and electrically connected with the transistor. Aconnection bump is formed on a second side of the buried insulationlayer. The connection bump is electrically connected with the contactstructure, and the second side is opposite to the first side in athickness direction of the buried insulation layer.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic drawing illustrating a radiofrequency deviceaccording to a first embodiment of the present invention.

FIGS. 2-6 are schematic drawings illustrating a manufacturing method ofthe radiofrequency device according to the first embodiment of thepresent invention, wherein FIG. 3 is a schematic drawing in a stepsubsequent to FIG. 2, FIG. 4 is a schematic drawing in a step subsequentto FIG. 3, FIG. 5 is a schematic drawing in a step subsequent to FIG. 4,and FIG. 6 is a schematic drawing in a step subsequent to FIG. 5.

FIG. 7 is a schematic drawing illustrating the radiofrequency devicebonded to a packaging substrate according to the first embodiment of thepresent invention.

FIG. 8 is a schematic drawing illustrating a radiofrequency deviceaccording to a second embodiment of the present invention.

FIG. 9 is a schematic drawing illustrating a radiofrequency deviceaccording to a third embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, numerous embodiments are set forth inorder to disclose specific features of the present invention, but notlimited thereto. For one of ordinary skill in the related art, it shouldbe understood that when an element such as a region, a layer, or aportion is referred to as being “formed” on another element, it can bedirectly, formed on the given element, or intervening elements may bepresent. However, when an element is described to be directly formed onanother element, there is not any intervening element. Additionally,when an element is referred to as being “formed” on another element, theelement may be formed on the given element by growth, deposition, etch,attach, connect, couple, or other approaches.

Additionally, terms, such as “bottom”, “below”, “above”, “top”, and thelike, may be used herein for ease of description to describe one elementor feature's relationship to another element(s) or feature(s) asillustrated in the figures. It will be understood that spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientations depicted inthe figures. For example, if the device in the figures in turned over,elements described as “below” or “beneath” can encompass both anorientation of above and below. The device may be otherwise oriented andthe spatially relative descriptors used herein interpreted accordingly.

Please refer to FIG. 1. FIG. 1 is a schematic drawing illustrating aradiofrequency device according to a first embodiment of the presentinvention. As shown in FIG. 1, a radiofrequency device 101 is providedin the present invention. The radiofrequency device 101 includes aburied insulation layer 20, a transistor T, a contact structure BC, aconnection bump 89, an interlayer dielectric layer 60, and a moldcompound layer 70A. The buried insulation layer 20 has a first side S1and a second side S2 opposite to the first side S1 in a thicknessdirection Z of the buried insulation layer 20. The transistor T isdisposed on the first side S1 of the buried insulation layer 20. Thecontact structure BC penetrates the buried insulation layer 20 and iselectrically connected with the transistor T. The connection bump 89 isdisposed on the second side S2 of the buried insulation layer 20 and iselectrically connected with the contact structure BC. The interlayerdielectric layer 60 is disposed on the first side S1 of the buriedinsulation layer 20 and covers the transistor T. The mold compound layer70A is disposed on the interlayer dielectric layer 60. In someembodiments, the mold compound layer 70A is disposed on the first sideS1 of the buried insulation layer 20, and the interlayer dielectriclayer 60 is disposed between the buried insulation layer 20 and the moldcompound layer 70A in the thickness direction Z of the buried insulationlayer 20, but not limited thereto.

In some embodiments, the mold compound layer 70A may include apolymer-based material, a resin-based material, an epoxy material,benzocyclobutene (BCB), polyimide (PI), silicon oxide, or other suitableinsulation materials having high electrical resistivity and/or lowdielectric constant. For example, the electrical resistivity of the moldcompound layer 70A may be greater than 20,000 ohm-cm for improving theoperation performance, such as harmonic performance, of theradiofrequency device 101, but not limited thereto. In some embodiments,the mold compound layer 70A may include a curable material 70 coated onthe interlayer dielectric layer 60, and the curable material 70 mayinclude the insulation materials described above and required additivesand/or other suitable insulation materials. The curing approach of thecurable material 70 may include photo curing, thermal curing, or othersuitable curing approaches, and the method for coating the curablematerial 70 may include spin coating, spray coating, slit coating, orother suitable coating approaches, but not limited thereto. In someembodiments, the mold compound layer 70A may also be formed on theinterlayer dielectric layer 60 by other suitable methods and/or othersuitable materials.

In some embodiments, the radiofrequency device 101 may further includean interconnection structure CS disposed in the interlayer dielectriclayer 60 and electrically connected with the transistor T. For example,in some embodiments, the transistor T may include a semiconductor layer30, a source doped region 32, a drain doped region 33, a gate dielectriclayer 51, and a gate structure 52. The interconnection structure CS mayinclude a first interconnection structure CS1, a second interconnectionstructure CS2, and a third interconnection structure CS3 electricallyconnected with the gate structure 52, the source doped region 32, andthe drain doped region 33 respectively, but not limited thereto. In someembodiments, the buried insulation layer 20 and the semiconductor layer30 may be an insulation layer and a semiconductor layer in asilicon-on-insulator (SOI) substrate respectively, the buried insulationlayer 20 may include a buried oxide insulation layer, and thesemiconductor layer may include a silicon-containing semiconductormaterial accordingly, but not limited thereto. In some embodiments, theburied insulation layer 20 maybe formed by other insulation materialsand/or the semiconductor layer 30 may be formed by other semiconductormaterials according to other considerations. In addition, the interlayerdielectric layer 60 may include multiple layers of dielectric material,such as silicon oxide, silicon oxynitride, or other suitable dielectricmaterials.

When the buried insulation layer 20 and the semiconductor layer 30 arethe insulation layer and the semiconductor layer in the SOI substraterespectively, the first side S1 of the buried insulation layer 20 may beregarded as a front side, and the second side S2 of the buriedinsulation layer 20 may be regarded as a back side, but not limitedthereto. The transistor T is disposed on the first side S1 of the buriedinsulation layer 20, the gate dielectric layer 51 may be disposedbetween the gate structure 52 and the semiconductor layer 30, and thesemiconductor layer 30 may be disposed between the gate dielectric layer51 and the buried insulation layer 20, but not limited thereto. In someembodiments, the transistor T may also have a structure different fromthe structure described above and/or the allocation of the parts in thetransistor T may be different from the condition described aboveaccording to some considerations. In some embodiments, the gatestructure 52 may include a non-metal gate such as a polysilicon gate, anon-metal gate formed by other suitable conductive materials, or a metalgate. The gate dielectric layer 51 may include an oxide layer such as asilicon oxide layer or other suitable dielectric materials such as ahigh dielectric constant (high-k) dielectric material. In addition, thesemiconductor layer 30 may include a body region 31 disposed between thegate structure 52 and the buried insulation layer 20 in the thicknessdirection Z of the buried insulation layer 20, and the body region 31may include a channel region of the transistor T, but not limitedthereto. The source doped region 32 and the drain doped region 33 may bedisposed in the semiconductor layer 30 at two opposite sides of the gatestructure 52 respectively. In some embodiments, the source doped region32 and the drain doped region 33 may be doped regions including N typedopants such as phosphorus and arsenic, and the body region 31 mayinclude a well such as a P well, but not limited thereto. In someembodiments, the source doped region 32 and the drain doped region 33may also be formed by other kinds of N type dopants or dopants withother conductivity types.

In some embodiments, the first interconnection structure CS1, the secondinterconnection structure CS2, and the third interconnection structureCS3 may respectively include a plurality of plugs (such as a first plug61 and a second plug 63 shown in FIG. 1) and a plurality of conductivelayers (such as a first metal layer 62 and a second metal layer 64 shownin FIG. 1) alternately disposed and stacked, but not limited thereto.The first plug 61, the second plug 63, the first metal layer 62, and thesecond metal layer 64 may include a low resistivity material and abattier layer respectively, but not limited thereto. The low resistivitymaterial mentioned above may include materials having relatively lowerresistivity, such as copper, aluminum, and tungsten, and the barrierlayer mentioned above may include titanium nitride, tantalum nitride, orother suitable barrier materials, but not limited thereto. In someembodiments, the radiofrequency device 101 may further include anisolation structure 40 disposed on the first side S1 of the buriedinsulation layer 20 and surrounding a part of the transistor T. Forexample, the isolation structure 40 may be disposed on the buriedinsulation layer 20 and surround the semiconductor layer 30, and theisolation structure 40 may include a single layer or multiple layers ofinsulation materials such as an oxide insulation material or anoxynitride insulation material, but not limited thereto.

In some embodiments, the contact structure BC may be electricallyconnected with the transistor T via the interconnection structure CS.For instance, the contact structure BC may penetrates the buriedinsulation layer 20, the isolation structure 40, and a part of theinterlayer dielectric layer 60 for contacting the first metal layer 62in the third interconnection structure CS3 and forming the electricalconnection. Therefore, the contact structure BC may be electricallyconnected with the drain doped region 33 in the transistor T via thethird interconnection structure CS3 in the interconnection structure CS,but not limited thereto. The contact structure BC may penetrate theburied insulation layer 20 from the back side (i.e. the second side S2)to the front side (i.e. the first side S1) of the buried insulationlayer 20 for being electrically connected with the transistor T, and thecontact structure BC may be regarded as aback side contact structure,but not limited thereto. The contact structure may be formed by abarrier layer 81 and a conductive material 82. The barrier layer 81 mayinclude titanium nitride, tantalum nitride, or other suitable barriermaterials, and the conductive material 82 may include conductivematerials having relatively lower electrical resistivity, such ascopper, aluminum, and tungsten, but not limited thereto.

In some embodiments, the radiofrequency device 101 may further include aconductive layer (such as a first conductive layer 83 shown in FIG. 1)and a dielectric layer (such as a first dielectric layer 84 shown inFIG. 1) disposed on the second side S2 of the buried insulation layer20. The first conductive layer 83 may contact and be electricallyconnected with the contact structure BC. The first dielectric layer 84may be disposed on the buried insulation layer 20 and the firstconductive layer 83, and a part of the first conductive layer 83 isexposed and is not covered by the first dielectric layer 84. Theconnection bump 89 may contact the exposed first conductive layer 83 forforming an electrical connection. Therefore, the connection bump 89 maybe electrically connected with the contact structure BC via the firstconductive layer 83. In some embodiments, the connection bump 89 may beelectrically connected with the transistor T via the first conductivelayer 83, the contact structure BC, and the interconnection structureCS, but not limited thereto. It is worth noting that, in someembodiments, a back side interconnection structure composed of aplurality of metal layers and a plurality of plugs alternately disposedand stacked may be formed on the second side S2 of the buried insulationlayer 20 according to some considerations, and the connection bump 89may be disposed on and electrically connected with this back sideinterconnection structure. In addition, the first dielectric layer 84may include silicon nitride, silicon oxynitride, or other suitableinsulation materials, and the first conductive layer 83 may includeconductive materials having relatively lower electrical resistivity,such as copper, aluminum, and tungsten, but not limited thereto. Theconnection bump 89 may include a solder ball or other suitable types ofconnection bumps, and the material of the connection bump 89 may includegold, copper, tin, lead, or other suitable conductive materials.

In the radiofrequency device 101, the contact structure BC may penetratethe buried insulation layer 20 from the second side S2 of the buriedinsulation layer 20 away from the semiconductor layer 30 and beelectrically connected with the transistor T. The interlayer dielectriclayer 60 maybe disposed on the first side S1 of the buried insulationlayer 20 and cover the transistor T. The mold compound layer 70Adisposed on the interlayer dielectric layer 60 may be used to replace ahigh resistance substrate used in a manufacturing process of theradiofrequency device 101 for reducing the manufacturing cost andimproving the operation performance of the radiofrequency device 101.

Please refer to FIGS. 2-6 and FIG. 1. FIGS. 2-6 are schematic drawingsillustrating a manufacturing method of the radiofrequency deviceaccording to the first embodiment of the present invention. FIG. 3 is aschematic drawing in a step subsequent to FIG. 2. FIG. 4 is a schematicdrawing in a step subsequent to FIG. 3. FIG. 5 is a schematic drawing ina step subsequent to FIG. 4. FIG. 6 is a schematic drawing in a stepsubsequent to FIG. 5. FIG. 1 may be regarded as a schematic drawing in astep subsequent to FIG. 6. As shown in FIG. 1, the manufacturing methodof the radiofrequency device 101 in this embodiment may include thefollowing steps. Firstly, the transistor T is formed on the first sideS1 of the buried insulation layer 20. The interlayer dielectric layer 60is formed on the first side S1 of the buried insulation layer 20, andthe interlayer dielectric layer 60 covers the transistor T. The moldcompound layer 70A is formed on the interlayer dielectric layer 60.After the step of forming the mold compound layer 70A, the contactstructure BC is formed penetrating the buried insulation layer 20, andthe contact structure BC is electrically connected with the transistorT. The connection bump 89 is formed on the second side S2 of the buriedinsulation layer 20, and the second side S2 is opposite to the firstside S1 in the thickness direction Z of the buried insulation layer 20.The connection bump 89 is electrically connected with the contactstructure BC.

Specifically, the manufacturing method of the radiofrequency device 101in this embodiment may include but is not limited to the followingsteps. As shown in FIG. 2, the isolation structure 40 may be formed onthe first side S1 of the buried insulation layer 20, and the isolationstructure 40 may surround the semiconductor layer 30. Subsequently, theinterlayer dielectric layer 60 and the interconnection structure CS maybe formed after the step of forming the transistor T, and theinterconnection structure CS may be formed in the interlayer dielectriclayer 60. The first interconnection structure CS1 may be formed on andelectrically connected with the gate structure 52. The secondinterconnection structure CS2 may be formed on and electricallyconnected with the source doped region 32. The third interconnectionstructure CS3 may be formed on and electrically connected with the draindoped region 33. In other words, the interlayer dielectric layer 60, thefirst interconnection structure CS1, the second interconnectionstructure CS2, the third interconnection structure CS3, and thetransistor T including the semiconductor layer 30, the source dopedregion 32, the drain doped region 33, the gate dielectric layer 51, andthe gate structure 52 may be all disposed over the first side S1 of theburied insulation layer 20. Additionally, a substrate 10 may be disposedon the second side S2 of the buried insulation layer 20. In someembodiments, the substrate 10, the buried insulation layer 20, and thesemiconductor layer 30 may be regarded as an SOI substrate, and thesubstrate 10 may be a low electrical resistivity substrate, but notlimited thereto.

Subsequently, as shown in FIG. 2 and FIG. 3, the mold compound layer 70Ais formed on the interlayer dielectric layer 60 after the steps offorming the interlayer dielectric layer 60 and the interconnectionstructure CS. In some embodiments, the step of forming the mold compoundlayer 70A may include a coating process 91, and the mold compound layer70A may include the curable material 70 coated on the interlayerdielectric layer 60 by the coating process 91, but not limited thereto.The coating process 91 may include spin coating, spray coating, slitcoating, or other suitable coating approaches, and the mold compoundlayer 70A may include a polymer-based material, a resin-based material,an epoxy material, benzocyclobutene, polyimide, silicon oxide, or othersuitable insulation materials having high electrical resistivity and/orlow dielectric constant. The interconnection structure CS is notdisposed in the mold compound layer 70A because the mold compound layer70A is formed on the interlayer dielectric layer 60 after the step offorming the interconnection structure CS, and the material compositionof the mold compound layer 70A is different from the materialcomposition of the interlayer dielectric layer 60.

As shown in FIG. 3 and FIG. 4, after the steps of forming the moldcompound layer 70A, the substrate 10 may be turned over, and the moldcompound layer 70 originally located above the interlayer dielectriclayer 60 may be located under the interlayer dielectric layer 60 afterturning over the substrate 10. As shown in FIG. 4 and FIG. 5, thesubstrate 10 may then be removed for exposing the second side S2 of theburied insulation layer 20. Subsequently, as shown in FIG. 5 and FIG. 6,the contact structure BC described above may be formed. In someembodiments, the contact structure BC may penetrate the buriedinsulation layer 20, the isolation structure 40, and a part of theinterlayer dielectric layer 60 for contacting and being electricallyconnected with the interconnection structure CS, and the contactstructure BC may be electrically connected with the transistor T via theinter connection structure CS accordingly, but not limited thereto. Insome embodiments, as shown in FIGS. 2-5, the substrate 10 may be locatedon the second side S2 of the buried oxide layer 20 during the step offorming the mold compound layer 70A, and the substrate 10 maybe removedbefore the step of forming the contact structure BC. In someembodiments, a planarization process 92 may be performed to the moldcompound layer 70A before the step of forming the contact structure BCand the step of removing the substrate 10 for improving the surfaceroughness of the mold compound layer 70A and/or adjusting the thicknessof the mold compound layer 70A according to some considerations. In someembodiments, the mold compound layer 70A may be used to replace a highelectrical resistivity handling substrate in processes subsequent to thestep of removing the substrate 10 for reducing the manufacturing cost.Additionally, the electrical resistivity of the mold compound layer 70Amay be greater than 20,000 ohm-cm for improving the operationperformance, such as harmonic performance, of the radiofrequency device101, but not limited thereto.

As shown in FIG. 6 and FIG. 1, the first conductive layer 83, the firstdielectric layer 84, and the connection bump 89 may then be formed onthe second side S2 of the buried insulation layer 20 after the step offorming the contact structure BC. The connection bump 89 is formed onthe first conductive layer 83, and the connection bump 89 iselectrically connected with the contact structure BC via the firstconductive layer 83. Additionally, please refer to FIG. 7. FIG. 7 is aschematic drawing illustrating the radiofrequency device 101 in thisembodiment bonded to a packaging substrate 200. As shown in FIG. 7, insome embodiments, the radiofrequency device 101 may be bonded to andelectrically connected with the packaging substrate 200 via theconnection bump 89, and other integrated circuits and/or otherfunctional devices may be disposed on the packaging substrate 200according to other considerations. In other words, the mold compoundlayer 70A in this embodiment is formed on the interlayer dielectriclayer 60 before the step of being bonded with the packaging substrate200, and the mold compound layer 70A may directly contact the topsurface of the interlayer dielectric layer 60 away from the buriedinsulation layer 20, but not limited thereto.

The following description will detail the different embodiments of thepresent invention. To simplify the description, identical components ineach of the following embodiments are marked with identical symbols. Formaking it easier to understand the differences between the embodiments,the following description will detail the dissimilarities amongdifferent embodiments and the identical features will not be redundantlydescribed.

Please refer to FIG. 8. FIG. 8 is a schematic drawing illustrating aradiofrequency device 102 according to a second embodiment of thepresent invention. As shown in FIG. 8, the difference between theradiofrequency device 102 and the radiofrequency device in the firstembodiment described above is that the contact structure BC in thisembodiment may directly contact the transistor T. For example, thecontact structure BC may include a first contact structure BC1, a secondcontact structure BC2, and a third contact structure BC3 electricallyconnected with the body region 31, the source doped region 32, and thedrain doped region 33 of the transistor T respectively. In someembodiments, the second contact structure BC2 may penetrate the buriedinsulation layer 20, the isolation structure 40 and the interlayerdielectric layer 60 located between the isolation structure 40 and thefirst metal layer 62 from the second side S2 of the buried insulationlayer 20 for contacting and being electrically connected with the firstmetal layer 62 of the second interconnection structure CS2. The thirdcontact structure BC3 may penetrate the buried insulation layer 20, theisolation structure and the interlayer dielectric layer 60 locatedbetween the isolation structure 40 and the first metal layer 62 from thesecond side S2 of the buried insulation layer 20 for contacting andbeing electrically connected with the first metal layer 62 of the thirdinterconnection structure CS3. Additionally, the first contact structureBC1 may penetrate the buried insulation layer 20 from the second side S2of the buried insulation layer 20 for contacting the body region 31. Insome embodiments, the body region 31 may be electrically connected withthe source doped region 32 via the first contact structure BC1, thefirst conductive layer 83, the second contact structure BC2, and thesecond interconnection structure CS2, but not limited thereto. In someembodiments, the radiofrequency device 102 may be applied in a low noiseamplifier (LNA), a power amplifier (PA), or other suitableradiofrequency applications, but not limited thereto.

Please refer to FIG. 9. FIG. 9 is a schematic drawing illustrating aradiofrequency device 103 according to a third embodiment of the presentinvention. As shown in FIG. 9, the difference between the radiofrequencydevice 103 and the radiofrequency device in the first embodimentdescribed above is that, in the radiofrequency device 103 of thisembodiment, a back side interconnection structure composed of aplurality of metal layers and a plurality of plugs alternately disposedand stacked may be disposed on the second side S2 of the buriedinsulation layer 20 according to some considerations, and the connectionbump 89 may be disposed on and electrically connected with this backside interconnection structure. For example, the radiofrequency device103 may further include a second dielectric layer 85, a back side plug86, a second conductive layer 87, and a third dielectric layer 88disposed on the second side S2 of the buried insulation layer 20. Thesecond dielectric layer 85 covers the first dielectric layer 84 and thefirst conductive layer 83. The back side plug 86 penetrate the seconddielectric layer 85 for being connected with the first conductive layer83. The second conductive layer 87 is disposed on the back side plug 86and electrically connected with the back side plug 86. The thirddielectric layer 88 is disposed on the second dielectric layer 85 andthe second conductive layer 87 and exposes a part of the secondconductive layer 87, and the connection bump 89 may contact and beelectrically connected with the exposed second conductive layer 87. Thematerial of the second dielectric layer 85 and the material of the thirddielectric layer 88 may be similar to the material of the firstdielectric layer 84 described above, and the material of the back sideplug 86 and the material of the second conductive layer 87 may besimilar to the material of the first conductive layer 83 describedabove, but not limited thereto.

To summarize the above descriptions, in the radiofrequency device andthe manufacturing method thereof in the present invention, the moldcompound layer may be formed on the interlayer dielectric layer afterthe steps of forming the interlayer dielectric layer and theinterconnection structure, and the mold compound layer may be used toreplace the expensive high resistance substrate in the manufacturingprocess for reducing the manufacturing cost of the radiofrequency deviceand improving the operation performance of the radiofrequency device.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A radiofrequency (RF) device, comprising: aburied insulation layer, wherein the buried insulation layer has a firstside and a second side opposite to the first side in a thicknessdirection of the buried insulation layer; a transistor disposed on thefirst side of the buried insulation layer; a contact structurepenetrating the buried insulation layer and electrically connected withthe transistor; a connection bump disposed on the second side of theburied insulation layer and electrically connected with the contactstructure; an interlayer dielectric layer disposed on the first side ofthe buried insulation layer and covering the transistor; and a moldcompound layer disposed on the interlayer dielectric layer.
 2. The RFdevice according to claim 1, wherein the interlayer dielectric layer isdisposed between the mold compound layer and the buried insulationlayer.
 3. The RF device according to claim 1, wherein the mold compoundlayer comprises a polymer-based material, a resin-based material, anepoxy material, or benzocyclobutene.
 4. The RF device according to claim1, wherein a resistivity of the mold compound layer is greater than20,000 ohm-cm.
 5. The RF device according to claim 1, wherein the moldcompound layer comprises a curable material coated on the interlayerdielectric layer.
 6. The RF device according to claim 1, furthercomprising: an interconnection structure disposed in the interlayerdielectric layer and electrically connected with the transistor.
 7. TheRF device according to claim 6, wherein the contact structure iselectrically connected with the transistor via the interconnectionstructure.
 8. The RF device according to claim 7, further comprising: anisolation structure disposed on the first side of the buried insulationlayer and surrounding a part of the transistor, wherein the contactstructure further penetrates the isolation structure for beingelectrically connected with the interconnection structure.
 9. The RFdevice according to claim 1, wherein the contact structure directlycontacts the transistor.
 10. The RF device according to claim 1, furthercomprising: a conductive layer disposed on the second side of the buriedinsulation layer, wherein the connection bump is disposed on theconductive layer, and the connection bump is electrically connected withthe contact structure via the conductive layer.
 11. A manufacturingmethod of a radiofrequency (RF) device, comprising: forming a transistoron a first side of a buried insulation layer; forming an interlayerdielectric layer on the first side of the buried insulation layer,wherein the interlayer dielectric layer covers the transistor; forming amold compound layer on the interlayer dielectric layer; forming acontact structure penetrating the buried insulation layer andelectrically connected with the transistor after forming the moldcompound layer; and forming a connection bump on a second side of theburied insulation layer, wherein the connection bump is electricallyconnected with the contact structure, and the second side is opposite tothe first side in a thickness direction of the buried insulation layer.12. The manufacturing method of the RF device according to claim 11,wherein the step of forming the mold compound layer comprises a coatingprocess.
 13. The manufacturing method of the RF device according toclaim 11, further comprising: performing a planarization process to themold compound layer before the step of forming the contact structure.14. The manufacturing method of the RF device according to claim 11,wherein the mold compound layer comprises a polymer-based material, aresin-based material, an epoxy material, or benzocyclobutene.
 15. Themanufacturing method of the RF device according to claim 11, wherein aresistivity of the mold compound layer is greater than 20,000 ohm-cm.16. The manufacturing method of the RF device according to claim 11,further comprising: forming an interconnection structure in theinterlayer dielectric layer before the step of forming the mold compoundlayer, wherein the interconnection structure is electrically connectedwith the transistor, and the contact structure is electrically connectedwith the transistor via the interconnection structure.
 17. Themanufacturing method of the RF device according to claim 16, furthercomprising: forming an isolation structure on the first side of theburied insulation layer, the isolation structure surrounding a part ofthe transistor, wherein the contact structure further penetrates theisolation structure for being electrically connected with theinterconnection structure.
 18. The manufacturing method of the RF deviceaccording to claim 11, wherein the contact structure directly contactsthe transistor.
 19. The manufacturing method of the RF device accordingto claim 11, further comprising: forming a conductive layer on thesecond side of the buried insulation layer, wherein the connection bumpis formed on the conductive layer, and the connection bump iselectrically connected with the contact structure via the conductivelayer.
 20. The manufacturing method of the RF device according to claim11, wherein a substrate is located on the second side of the buriedoxide layer during the step of forming the mold compound layer, and thesubstrate is removed before the step of forming the contact structure.